QS8F2TCR

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2.5 A

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TSMT-8

Packaging :

Reel

Pd - Power Dissipation :

1.5 W

Qg - Gate Charge :

13 nC

Rds On - Drain-Source Resistance :

44 mOhms

Technology :

SI

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

12 V

Vgs - Gate-Source Voltage :

- 10 V, + 10 V

Vgs th - Gate-Source Threshold Voltage :

1 V