- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- - 50 V
- Collector- Emitter Voltage VCEO Max :
- - 50 V
- Collector-Emitter Saturation Voltage :
- - 220 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- - 150 mA
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 320 mW
- Series :
- TBC8X7
- Transistor Polarity :
- PNP
- 数据表
- TBC857B,LM
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
TBC847B,LM | Toshiba | 76,484 | Bipolar Transistors - BJT BJT NPN 0.15A 50V |
TBC84A | Essentra Components | 0 | Cable Mounting & Accessories |