- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - Pre-Biased
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Single
- Continuous Collector Current :
- - 100 mA
- DC Collector/Base Gain hfe Min :
- 80
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- USM-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 100 mW
- Peak DC Collector Current :
- 100 mA
- Series :
- RN2306
- Transistor Polarity :
- PNP
- Typical Input Resistor :
- 4.7 kOhms
- Typical Resistor Ratio :
- 0.1
- 数据表
- RN2306(TE85L,F)
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN2301(TE85L,F) | Toshiba | 0 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms |
| RN2301,LF | Toshiba | 9,000 | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor |
| RN2301,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP , R1=4.7kOhm, R2=4.7kOhm, VCEO=-50V, IC=-0.1A (SOT-323) |
| RN2302(TE85L,F) | Toshiba | 0 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10K x 10Kohms |
| RN2302,LF | Toshiba | 20,730 | Bipolar Transistors - Pre-Biased Bias Resistor PNP 10kohm -100mA -50V |
| RN2302,LXHF | Toshiba | 6,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP , R1=10kOhm, R2=10kOhm, VCEO=-50V, IC=-0.1A (SOT-323) |
| RN2303(TE85L,F) | Toshiba | 0 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 22Kohms |
| RN2303,LF | Toshiba | 11,899 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN2303,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 22kOhm, 22kOhm, -50V, -0.1A (SOT-323) |
| RN2304(TE85L,F) | Toshiba | 0 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms |
| RN2304,LF | Toshiba | 0 | Bipolar Transistors - Pre-Biased 47kohm 47kohm 0.1A SOT-323 50V |
| RN2304,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 47kO, 47kO, -50V, -0.1A (SOT-323) |
| RN2305(TE85L,F) | Toshiba | 784 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms |
| RN2305,LF | Toshiba | 0 | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms |
| RN2305,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP BRT, 2.2kO, 47kO, -50V, -0.1A (SOT-323) |
