IMZA65R027M1HXKSA1
- Mfr.Part #
 - IMZA65R027M1HXKSA1
 
- Manufacturer
 - Infineon Technologies
 
- Package/Case
 - TO-247-3
 
- Datasheet
 - Download
 
- Description
 - MOSFET SILICON CARBIDE MOSFET
 
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- Manufacturer :
 - Infineon Technologies
 
- Product Category :
 - MOSFET
 
- Channel Mode :
 - Enhancement
 
- Id - Continuous Drain Current :
 - 59 A
 
- Maximum Operating Temperature :
 - + 150 C
 
- Minimum Operating Temperature :
 - - 55 C
 
- Mounting Style :
 - Through Hole
 
- Number of Channels :
 - 1 Channel
 
- Package / Case :
 - TO-247-3
 
- Packaging :
 - Tube
 
- Pd - Power Dissipation :
 - 189 W
 
- Qg - Gate Charge :
 - 63 nC
 
- Rds On - Drain-Source Resistance :
 - 34 mOhms
 
- Technology :
 - SiC
 
- Tradename :
 - CoolSiC
 
- Transistor Polarity :
 - N-Channel
 
- Vds - Drain-Source Breakdown Voltage :
 - 650 V
 
- Vgs - Gate-Source Voltage :
 - - 5 V, + 23 V
 
- Vgs th - Gate-Source Threshold Voltage :
 - 5.7 V
 
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