IPD25CN10NGATMA1
- Mfr.Part #
 - IPD25CN10NGATMA1
 
- Manufacturer
 - Infineon Technologies
 
- Package/Case
 - TO-252-3
 
- Datasheet
 - Download
 
- Description
 - MOSFET TRENCH >=100V
 
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- Manufacturer :
 - Infineon Technologies
 
- Product Category :
 - MOSFET
 
- Channel Mode :
 - Enhancement
 
- Id - Continuous Drain Current :
 - 35 A
 
- Maximum Operating Temperature :
 - + 175 C
 
- Minimum Operating Temperature :
 - - 55 C
 
- Mounting Style :
 - SMD/SMT
 
- Number of Channels :
 - 1 Channel
 
- Package / Case :
 - TO-252-3
 
- Packaging :
 - Cut Tape, MouseReel, Reel
 
- Pd - Power Dissipation :
 - 71 W
 
- Qg - Gate Charge :
 - 23 nC
 
- Rds On - Drain-Source Resistance :
 - 19 mOhms
 
- Technology :
 - SI
 
- Tradename :
 - OptiMOS
 
- Transistor Polarity :
 - N-Channel
 
- Vds - Drain-Source Breakdown Voltage :
 - 100 V
 
- Vgs - Gate-Source Voltage :
 - - 20 V, + 20 V
 
- Vgs th - Gate-Source Threshold Voltage :
 - 3 V
 
- 数据表
 - IPD25CN10NGATMA1
 
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