HN4B102J(TE85L,F)

Manufacturer :

Toshiba

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

- 30 V, 60 V

Collector- Emitter Voltage VCEO Max :

- 30 V, 30 V

Configuration :

Dual

Emitter- Base Voltage VEBO :

- 7 V, 7 V

Maximum DC Collector Current :

- 8 A, 8 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-25-5

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

1.1 W

Series :

HN4B102

Transistor Polarity :

NPN, PNP