- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- 0.15 A
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Reel
- Pd - Power Dissipation :
- 100 mW
- Series :
- HN4B01
- Transistor Polarity :
- NPN, PNP
- Datasheets
- HN4B01JE(TE85L,F)
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN4B102J(TE85L,F) | Toshiba | 0 | Bipolar Transistors - BJT 30V PWR TRANS |
