APTGT600U170D4G

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.7 kV

Collector-Emitter Saturation Voltage :

2 V

Configuration :

Single

Continuous Collector Current at 25 C :

1.1 kA

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 125 C

Minimum Operating Temperature :

- 40 C

Package / Case :

D4-5

Packaging :

Bulk

Pd - Power Dissipation :

2.9 kW

Product :

IGBT Silicon Modules