BSM50GD120DN2E3226

Mfr.Part #
BSM50GD120DN2E3226
Manufacturer
Infineon Technologies
Package/Case
EconoPACK 2
Datasheet
Download
Description
IGBT Modules N-CH 1.2KV 50A

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Manufacturer :
Infineon Technologies
Product Category :
IGBT Modules
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.5 V
Configuration :
Hex
Continuous Collector Current at 25 C :
50 A
Gate-Emitter Leakage Current :
200 nA
Maximum Operating Temperature :
+ 150 C
Package / Case :
EconoPACK 2
Packaging :
Tray
Pd - Power Dissipation :
350 W
Product :
IGBT Silicon Modules
Datasheets
BSM50GD120DN2E3226

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