BSM50GAL120DN2

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1200 V

Collector-Emitter Saturation Voltage :

2.5 V

Configuration :

Half Bridge

Continuous Collector Current at 25 C :

78 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

Half Bridge GAL 1

Packaging :

Tray

Pd - Power Dissipation :

400 W

Product :

IGBT Silicon Modules