APTGT50DH60T1G

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

1.5 V

Configuration :

Dual

Continuous Collector Current at 25 C :

80 A

Gate-Emitter Leakage Current :

600 nA

Maximum Operating Temperature :

+ 100 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SP1-12

Packaging :

Tube

Pd - Power Dissipation :

176 W

Product :

IGBT Silicon Modules