APTGT100DU120TG

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.7 V

Configuration :

Dual

Continuous Collector Current at 25 C :

140 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 100 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SP4

Packaging :

Tube

Pd - Power Dissipation :

480 W

Product :

IGBT Silicon Modules