APTGTQ100DA65T1G

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.65 V

Configuration :

Single

Continuous Collector Current at 25 C :

100 A

Gate-Emitter Leakage Current :

240 nA

Maximum Operating Temperature :

+ 125 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SP1

Packaging :

Tube

Pd - Power Dissipation :

250 W

Product :

IGBT Silicon Modules