APTGLQ200HR120G

Manufacturer :

Microsemi / Microchip

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV, 600 V

Collector-Emitter Saturation Voltage :

2.05 V, 1.5 V

Configuration :

Dual Common Emitter

Continuous Collector Current at 25 C :

300 A, 150 A

Gate-Emitter Leakage Current :

480 nA, 400 nA

Maximum Operating Temperature :

+ 100 C

Minimum Operating Temperature :

- 40 C

Package / Case :

SP6

Packaging :

Tube

Pd - Power Dissipation :

1 kW, 340 W

Product :

IGBT Silicon Modules