NVJS4151PT1G

Mfr.Part #
NVJS4151PT1G
Manufacturer
onsemi
Package/Case
SOT-363-6
Datasheet
Download
Description
MOSFET 20V 4.2A 60MOHM PFET

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
onsemi
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
3.2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOT-363-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1.2 W
Qg - Gate Charge :
10 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
55 mOhms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage :
1.2 V
Datasheets
NVJS4151PT1G

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
NVJS4405NT1G onsemi 2,915 MOSFET NFET SC88 25V 1.2A 350MOH