- Manufacturer :
- onsemi
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 1.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 890 mW
- Qg - Gate Charge :
- 1.5 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 350 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 25 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 650 mV
- Datasheets
- NVJS4405NT1G
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NVJS4151PT1G | onsemi | 4,257 | MOSFET 20V 4.2A 60MOHM PFET |
