- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 17.3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 45 W
- Qg - Gate Charge :
- 45 nC
- Rds On - Drain-Source Resistance :
- 200 mOhms
- Technology :
- SI
- Tradename :
- U-MOSIX-H
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
- Datasheets
- TK5R3A06PL,S4X
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Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK5R1A08QM,S4X | Toshiba | 259 | MOSFET UMOS10 TO-220SIS 80V 5.1mohm |
| TK5R1P08QM,RQ | Toshiba | 14,994 | MOSFET UMOS10 DPAK 80V 5.1mohm |
| TK5R3E08QM,S1X | Toshiba | 195 | MOSFET UMOS10 TO-220AB 80V 5.3mohm |
