- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 84 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- -
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DPAK-2
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 104 W
- Qg - Gate Charge :
- 56 nC
- Rds On - Drain-Source Resistance :
- 5.1 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 80 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
- Datasheets
- TK5R1P08QM,RQ
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK5R1A08QM,S4X | Toshiba | 259 | MOSFET UMOS10 TO-220SIS 80V 5.1mohm |
| TK5R3A06PL,S4X | Toshiba | 47 | MOSFET TO-220SIS PD=36W 1MHz PWR MOSFET TRNS |
| TK5R3E08QM,S1X | Toshiba | 195 | MOSFET UMOS10 TO-220AB 80V 5.3mohm |
