IXXN110N65C4H1

Manufacturer :

IXYS

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

1.98 V

Configuration :

Single Dual Emitter

Continuous Collector Current at 25 C :

210 A

Gate-Emitter Leakage Current :

100 nA

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Package / Case :

SOT-227B-4

Packaging :

Tube

Pd - Power Dissipation :

750 W

Product :

IGBT Silicon Modules