IXXN110N65B4H1

Manufacturer :

IXYS

Product Category :

IGBT Transistors

Collector- Emitter Voltage VCEO Max :

650 V

Collector-Emitter Saturation Voltage :

2.1 V

Configuration :

Single

Continuous Collector Current at 25 C :

215 A

Maximum Gate Emitter Voltage :

30 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-227

Packaging :

Tube

Pd - Power Dissipation :

750 W

Series :

Trench - 650V - 1200V GenX27

Technology :

SI