IXXN200N60C3H1

Manufacturer :

IXYS

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

1.6 V

Configuration :

Single

Continuous Collector Current at 25 C :

200 A

Gate-Emitter Leakage Current :

200 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Package / Case :

SOT-227B-4

Packaging :

Tube

Product :

IGBT Silicon Modules