IQE006NE2LM5ATMA1
- Mfr.Part #
- IQE006NE2LM5ATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TSON-8-4
- Datasheet
- Download
- Description
- MOSFET TRENCH <= 40V
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 298 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TSON-8-4
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 89 W
- Qg - Gate Charge :
- 28.5 nC
- Rds On - Drain-Source Resistance :
- 650 uOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 25 V
- Vgs - Gate-Source Voltage :
- - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
- Datasheets
- IQE006NE2LM5ATMA1
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IQE006NE2LM5CGATMA1 | Infineon Technologies | 2,593 | MOSFET TRENCH <= 40V |
| IQE008N03LM5ATMA1 | Infineon Technologies | 0 | MOSFET TRENCH <= 40V |
| IQE008N03LM5CGATMA1 | Infineon Technologies | 0 | MOSFET TRENCH <= 40V |
| IQE013N04LM6ATMA1 | Infineon Technologies | 4,146 | MOSFET TRENCH <= 40V |
| IQE013N04LM6CGATMA1 | Infineon Technologies | 4,779 | MOSFET TRENCH <= 40V |
| IQE030N06NM5ATMA1 | Infineon Technologies | 0 | MOSFET TRENCH 40<-<100V |
| IQE030N06NM5CGATMA1 | Infineon Technologies | 0 | MOSFET TRENCH 40<-<100V |
| IQE065N10NM5ATMA1 | Infineon Technologies | 0 | MOSFET TRENCH >=100V |
| IQE065N10NM5CGATMA1 | Infineon Technologies | 0 | MOSFET TRENCH >=100V |
