IQE006NE2LM5CGATMA1

Manufacturer :

Infineon Technologies

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

298 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TTFN-9-1

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

89 W

Qg - Gate Charge :

28.5 nC

Rds On - Drain-Source Resistance :

650 uOhms

Technology :

SI

Tradename :

OptiMOS

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

25 V

Vgs - Gate-Source Voltage :

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

2 V