IQE013N04LM6CGATMA1

Mfr.Part #
IQE013N04LM6CGATMA1
Manufacturer
Infineon Technologies
Package/Case
TTFN-9-1
Datasheet
Download
Description
MOSFET TRENCH <= 40V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
205 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TTFN-9-1
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
107 W
Qg - Gate Charge :
20 nC
Rds On - Drain-Source Resistance :
1.35 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
40 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1.2 V
Datasheets
IQE013N04LM6CGATMA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
IQE006NE2LM5ATMA1 Infineon Technologies 4,380 MOSFET TRENCH <= 40V
IQE006NE2LM5CGATMA1 Infineon Technologies 2,593 MOSFET TRENCH <= 40V
IQE008N03LM5ATMA1 Infineon Technologies 0 MOSFET TRENCH <= 40V
IQE008N03LM5CGATMA1 Infineon Technologies 0 MOSFET TRENCH <= 40V
IQE013N04LM6ATMA1 Infineon Technologies 4,146 MOSFET TRENCH <= 40V
IQE030N06NM5ATMA1 Infineon Technologies 0 MOSFET TRENCH 40<-<100V
IQE030N06NM5CGATMA1 Infineon Technologies 0 MOSFET TRENCH 40<-<100V
IQE065N10NM5ATMA1 Infineon Technologies 0 MOSFET TRENCH >=100V
IQE065N10NM5CGATMA1 Infineon Technologies 0 MOSFET TRENCH >=100V